1. Course Objectives
To impart the knowledge of VLSI design methodologies and Digital VLSI circuit design.
2. Syllabus
Module 1:
VLSI Design Methodologies. Introduction: Moore’s law. ASIC design, Full custom ASICs, Standard cell based ASICs, Gate array based ASICs, SoCs, FPGA devices, ASIC and FPGA Design flows, Top-Down and Bottom-Up design methodologies. Logical and Physical design. Speed power and area considerations in VLSI design
Module 2:
Static CMOS Logic Design MOSFET Logic Design – NMOS Inverter (Static analysis only), basic logic gates, CMOS logic, Static and transient analysis of CMOS inverter, Switching power dissipation and delays. Realization of logic functions with static CMOS logic, Pass transistor logic, and transmission gate logic
Module 3:
Dynamic logic Design and Storage Cells Dynamic Logic Design-Pre charge- Evaluate logic, Domino Logic, NP domino logic. Read Only Memory-4×4 MOS ROM Cell Arrays(OR,NOR,NAND) Random Access Memory –SRAM-Six transistor CMOS SRAM cell, DRAM –Three transistor and One transistor Dynamic Memory Cell.
Module 4:
Arithmetic circuits Adders: Static adder, Carry-Bypass adder, Linear Carry- Select adder, Square- root carry- select adder. Multipliers: Array multiplier.
Module 5:
Fabrication techniques and MOSFET physical Design Material Preparation Purification and Crystal growth (CZ process), wafer preparation Thermal Oxidation- Growth mechanisms, Dry and Wet oxidation. Diffusion and ion implantation techniques. Epitaxy : molecular beam epitaxy. Lithography- Photo lithographic sequence, Electron Beam Lithography, Etching and metal deposition techniques. MOSFET Fabrication techniques Twin-Tub fabrication sequence, Fabrication process flow. Layout Design and Design rules, Stick Diagram and Design rules-micron rules and Lambda rules. (definitions only).layout of CMOS Inverter, two input NAND and NOR gates.
3. Text Books (T)
T1. Sung –Mo Kang & Yusuf Leblebici, CMOS Digital Integrated Circuits- Analysis & Design, McGraw-Hill, Third Ed., 2003
T2. S.M. SZE, VLSI Technology, 2/e, Indian Edition, McGraw-Hill,2003
T3. Wayne Wolf, Modern VLSI design, Third Edition, Pearson Education,2002
4. Reference Books (R)
R1. Michael John Sebastian Smith, Application Specific Integrated Circuits, Pearson Education,2001.
R2. Neil H.E. Weste, Kamran Eshraghian, Principles of CMOS VLSI Design- A Systems Perspective, Second Edition. Pearson Publication, 2005.
R3. Jan M. Rabaey, Digital Integrated Circuits- A Design Perspective, Prentice Hall, Second Edition, 2005.
R4. Razavi – Design of Analog CMOS Integrated Circuits,1e, McGraw Hill Education India Education, New Delhi, 2003.
Curriculum
- 5 Sections
- 37 Lessons
- 10 Weeks
- Module 1VLSI Design Methodologies. Introduction: Moore’s law. ASIC design, Full custom ASICs, Standard cell based ASICs, Gate array based ASICs, SoCs, FPGA devices, ASIC and FPGA Design flows, Top-Down and Bottom-Up design methodologies. Logical and Physical design. Speed power and area considerations in VLSI design5
- Module 2Static CMOS Logic Design MOSFET Logic Design - NMOS Inverter (Static analysis only), basic logic gates, CMOS logic, Static and transient analysis of CMOS inverter, Switching power dissipation and delays. Realization of logic functions with static CMOS logic, Pass transistor logic, and transmission gate logic6
- Module 3Dynamic logic Design and Storage Cells Dynamic Logic Design-Pre charge- Evaluate logic, Domino Logic, NP domino logic. Read Only Memory-4x4 MOS ROM Cell Arrays(OR,NOR,NAND) Random Access Memory –SRAM-Six transistor CMOS SRAM cell, DRAM –Three transistor and One transistor Dynamic Memory Cell.8
- Module 4Arithmetic circuits Adders: Static adder, Carry-Bypass adder, Linear Carry- Select adder, Square- root carry- select adder. Multipliers: Array multiplier.5
- Module 5Fabrication techniques and MOSFET physical Design Material Preparation Purification and Crystal growth (CZ process), wafer preparation Thermal Oxidation- Growth mechanisms, Dry and Wet oxidation. Diffusion and ion implantation techniques. Epitaxy : molecular beam epitaxy. Lithography- Photo lithographic sequence, Electron Beam Lithography, Etching and metal deposition techniques. MOSFET Fabrication techniques Twin-Tub fabrication sequence, Fabrication process flow. Layout Design and Design rules, Stick Diagram and Design rules-micron rules and Lambda rules. (definitions only).layout of CMOS Inverter, two input NAND and NOR gates.13