PHYSICS FOR INFORMATION SCIENCE

Course code                      :  GAPHT121

Course name                     :  PHYSICS FOR INFORMATION SCIENCE

COURSE OBJECTIVES

1. To provide students a solid background in the fundamentals of Physics and to impart that knowledge in Information Science disciplines. The course is designed to develop scientific attitudes and enable the students to correlate the concepts of Physics with the core
2. To make the students gain practical knowledge to correlate the theoretical studies and to develop practical applications of engineering.

COURSE OUTCOMES

CO1 : Explain electrical conductivity and Superconductivity

CO2 : Describe the behavior of matter in the atomic and subatomic levels through the principles of quantum mechanics.

CO3 : Apply the fundamentals of Semiconductor Physics in engineering

CO4 : Describe the behavior of semiconductor materials in semiconductor devices.

CO5 : Apply basic knowledge of principles and theories in physics to

conduct experiments.

SYLLABUS DESCRIPTION

1. Electrical conductivity

Classical free electron theory, Electrical conductivity in metals, Fermi Dirac distribution, Variation of Fermi function with temperature, Fermi Energy, Energy bands, Classification of materials into conductor, semiconductor and insulator.

Superconductivity, Transition temperature, Critical field, Meissner effect, Type I and Type II Super conductors. BCS Theory, Applications of superconductors.

2. Semiconductor Devices

Semiconductor devices- Rectifiers- Full wave and Half wave. Zener diode-VI characteristics, Tunnel diode-VI characteristics, Semiconductor Laser (Construction and working), Applications

Photonic devices (Qualitative treatment only) – Photodetectors (Junction and PIN photodiodes), Solar cells- IV Characteristics, Efficiency, Stringing of Solar cells to solar panel, Light Emitting Diode, Applications

3. Semiconductor Physics

Intrinsic semiconductor, Derivation of density of electrons in conduction band and density of holes in valence band, Intrinsic carrier concentration, Variation of Intrinsic carrier concentration with temperature, Extrinsic semiconductor (qualitative)

Formation of p-n junction, Fermi level in semiconductors-intrinsic and extrinsic, Energy band diagram of p-n junction – Qualitative description of charge flow across a p-n junction – Forward and reverse biased p-n junctions, Diode equation (Derivation), I-V Characteristics of p-n junction

4. Quantum Mechanics

Introduction, Concept of uncertainty and conjugate observables (qualitative), Uncertainty principle (statement only), Application of uncertainty principle- Absence of electron inside nucleus – Natural line broadening, Wave function – properties – physical interpretation, Formulation of time-dependent and time independent Schrodinger equations, Particle in a one- dimensional box – Derivation of energy eigenvalues and normalized wave function, Quantum Mechanical Tunnelling (Qualitative).

COURSE REFERENCES

1. Robert F Pierret ,” Semiconductor Devices Fundamentals”, Pearson Education, 1995
2. Ben G Streetman and Sanjay Kumar Banerjee,” Solid State Electronic Devices “,Pearson Education 6/e,2010
3. S.O. Pillai ,” Solid State Physics “, New-age international publishers, 10^th Edition, 2022