ECT 448 LOW POWER VLSI → L4 - eLearning @ AISAT

ECT 448 LOW POWER VLSI

Curriculum

5 Sections
23 Lessons
10 Weeks

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Module 1
Module 1: Physics of Power dissipation in MOSFET devices Need for low power circuit design, MIS Structure, Short channel effects-surface scattering, punch through, velocity saturation, impact ionization Hot electron effects, Drain Induced Barrier Lowering, Deep submicron transistor design issues.
5
Module 2
Sources of power dissipation in CMOS-Dynamic Power Dissipation: Charging and Discharging capacitance power dissipation , Short Circuit Power: Short Circuit Current of Inverter , Short circuit current dependency with input and output load , Glitching Power, Static Power Dissipation, Leakage Power Dissipation, Gate level power analysis : Capacitive, internal and Static power dissipation of gate level circuit.
5
Module 3
Module 3: Power Reduction Techniques :Supply voltage Scaling Approaches: Multi VDD and Dynamic VDD, leakage power reduction Techniques – Transistor stacking, VTCMOS,MTCMOS, DTCMOS, Power gating, Clock gating for Dynamic power dissipation, Transistor and Gate Sizing for Dynamic and Leakage Power Reduction.
4
Module 4
Circuit design style- clocked design style- Basic concept, Domino logic (domino NAND gate), Differential Current Switch Logic. Non clocked circuit design style-fully complementary logic. NMOS and pseudo –NMOS logic, differential cascade voltage switch logic(DCVS)
5
Module 5
Adiabatic switching – Adiabatic charging, adiabatic amplification, One stage and two stage adiabatic buffer, Adiabatic logic gates, pulsed power supplies, Reversible logic basic concepts.
4

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L3

ECT 448 LOW POWER VLSI

Curriculum

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